Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors - Équipe Matériaux et Procédés pour la Nanoélectronique
Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2012

Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors

Résumé

Investigation of low-frequency noise in nanoscale Schottky-barrier (SB)-based field-effect transistors (SB-FETs) is of prime importance due to its large amplitude in emerging bottom-up devices. In addition, noise can give additional information on charge transport mechanisms. In this paper, we study the 1/ f noise in nanoscale silicon-on-insulator SB-FETs. An unexpected feature is the clear contribution of the SB to the noise even if the barrier height is lower than 100 meV. Barrier modulation techniques such as dopant segregation are used to tune the barrier height. We propose a generic formulation for low-frequency noise that is applicable to any diffusive SB-FETs.
Fichier principal
Vignette du fichier
2012-Clement-TED-SBMOS-Noise-hal.pdf (943.9 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-00787365 , version 1 (12-09-2024)

Identifiants

Citer

N. Clement, G. Larrieu, Emmanuel Dubois. Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors. IEEE Transactions on Electron Devices, 2012, 59 (1), pp.180-187. ⟨10.1109/TED.2011.2169676⟩. ⟨hal-00787365⟩
45 Consultations
2 Téléchargements

Altmetric

Partager

More